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ZXSDS2M832
SEMICONDUCTORS
ISSUE 2 June 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(f)
RJA
83.3
°C/W
Junction to Ambient
(b)(f)
RJA
51
°C/W
Junction to Ambient
(c)(f)
RJA
125
°C/W
Junction to Ambient
(d)(f)
RJA
111
°C/W
Junction to Ambient
(d)(g)
RJA
73.5
°C/W
Junction to Ambient
(e)(g)
RJA
41.7
°C/W
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached. The
copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions
with all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions
with all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in
the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz
weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Reverse Voltage
VR
60
V
Forward Voltage @ IF
= 1000mA
VF
600
mV
Forward Current
IF
1.65
A
Average Forward Current D=50%, t<=300us IFAV
1.24
A
Non Repetitive Forward Current t<=100us
Non Repetitive Forward Current t<=10ms
IFSM
16.8
5.63
A
A
Power Dissipation at TA=25°C
(a)(f)
Linear Derating Factor
PD
1.2
12
W
mW/°C
Power Dissipation at TA=25°C
(b)(f)
Linear Derating Factor
PD
2
20
W
mW/°C
Power Dissipation at TA=25°C
(c)(f)
Linear Derating Factor
PD
0.8
8
W
mW/°C
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
PD
0.9
9
W
mW/°C
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
PD
1.36
13.6
W
mW/°C
Power Dissipation at TA=25°C
(e)(g)
Linear Derating Factor
PD
2.4
24
W
mW/°C
Storage Temp, Range
Tstg
-55 to+150
°C
Operating & Storage Temp, Range
Tj
-55 to+125
°C
ABSOLUTE MAXIMUM RATINGS
OBSOLETE
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